Rashba spin-orbit interaction in a Mg_xZn_(1−x)O/ZnO two-dimensional electron gas studied by electrically detected electron spin resonance

Creators: Kozuka, Y.; Teraoka, S.; Falson, J.; Oiwa, A.; Tsukazaki, A.; Tarucha, S.; Kawasaki, M.

Abstract

We report the experimental determination of Rashba spin-orbit interaction (SOI) strength in two-dimensional electrons in a MgZnO/ZnO heterostructure using electrically detected electron spin resonance. The Rashba parameter is determined to be 7.0 × 10⁻¹⁴ eV m, which is the second smallest value among prevalent semiconductor heterostructures, following Si/SiGe. A long transverse spin relaxation time was derived to show a maximum value of 27 ns, owing to weak SOI. Our study demonstrates that the ZnO heterostructure is a promising candidate for spintronic devices utilizing long spin coherence.

Additional Information

© 2013 American Physical Society. (Received 30 January 2013; published 7 May 2013) We acknowledge Y. Kasahara and Y. Iwasa for useful discussions. This work was partly supported by Grant-in-Aids for Scientific Research (S) No. 24226002 and Grant-in-Aid for Scientific Research on Innovative Areas No. 21102003 from MEXT, Japan, and by "Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST)" Program from the Japan Society for the Promotion of Science (JSPS) initiated by the Council for Science and Technology Policy as well as by Murata Science Foundation (Y.K.).

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Published - PhysRevB.87.205411.pdf

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