Published August 28, 2014
| Published
Journal Article
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Air-gap gating of MgZnO/ZnO heterostructures
Abstract
The adaptation of "air-gap" dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5 μm. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3 mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.
Additional Information
© 2014 AIP Publishing LLC. (Received 23 June 2014; accepted 18 August 2014; published online 28 August 2014) We wish to thank to Y. Nakamura, R. Yamazaki, and R. Goto for helpful advice. This work was partly supported by JSPS Grant-in-Aid for Scientific Research(S) No.24226002 and for Young Scientist (A) No. 23686008 and the Japan Society for the Promotion of Science through "Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)," initiated by the Council for Science and Technology Policy (CSTP).Attached Files
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Additional details
- Eprint ID
- 102297
- Resolver ID
- CaltechAUTHORS:20200402-144734077
- Japan Society for the Promotion of Science (JSPS)
- 24226002
- Japan Society for the Promotion of Science (JSPS)
- 23686008
- Council for Science and Technology Policy (CSTP)
- Created
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2020-04-02Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field