Electron scattering times in ZnO based polar heterostructures

Creators: Falson, J.; Kozuka, Y.; Smet, J. H.; Arima, T.; Tsukazaki, A.; Kawasaki, M.

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Abstract

The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10⁶ cm²/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

Additional Information

© 2015 AIP Publishing LLC. (Received 17 June 2015; accepted 6 August 2015; published online 24 August 2015) We acknowledge valuable discussions with D. Maryenko, I. Dmitriev, M. Manfra, and G. Csathy. This work was partly supported by JSPS Grant-in-Aid for Scientific Research(S) No. 24226002 and for Young Scientist (A) No. 23686008 and the "Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)," initiated by the Council for Science and Technology Policy (CSTP). This work was carried out by joint research of the Cryogenic Research Center, the University of Tokyo.

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