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Published May 27, 2016 | Published + Supplemental Material
Journal Article Open

Observation of the quantum Hall effect in δ-doped SrTiO₃

Abstract

The quantum Hall effect is a macroscopic quantum phenomenon in a two-dimensional electron system. The two-dimensional electron system in SrTiO₃ has sparked a great deal of interest, mainly because of the strong electron correlation effects expected from the 3d orbitals. Here we report the observation of the quantum Hall effect in a dilute La-doped SrTiO₃-two-dimensional electron system, fabricated by metal organic molecular-beam epitaxy. The quantized Hall plateaus are found to be solely stemming from the low Landau levels with even integer-filling factors, ν=4 and 6 without any contribution from odd ν's. For ν=4, the corresponding plateau disappears on decreasing the carrier density. Such peculiar behaviours are proposed to be due to the crossing between the Landau levels originating from the two subbands composed of d orbitals with different effective masses. Our findings pave a way to explore unprecedented quantum phenomena in d-electron systems.

Additional Information

© 2016 The Author(s). This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ Received 06 November 2015. Accepted 15 April 2016. Published 27 May 2016. We are grateful to H.Y. Hwang and N. Nagaosa for fruitful discussions. This work was partly supported by the 'Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST)' of the Japan Society for the Promotion of Science (JSPS) initiated by the Council for Science and Technology Policy, by JSPS Grants-in Aid for Scientific Research, No. 24226002, and by PRESTO-JST 'Innovative nano-electronics through interdisciplinary collaboration among material, device and system layers'. Y.M. is supported by the RIKEN Junior Research Associate Program. Author Contributions: Y.M. and K.S.T. grew and characterized the films. Y.M., Y.K. and J.F. performed the low-temperature measurements. M.S.B. performed the electronic structure calculations. Y.M. and K.S.T. analysed the data. D.M., A.T., Y.T. and M.K. contributed to discussion of the results and guided the project. Y.M., K.S.T., M.S.B. and D.M. wrote the manuscript with contributions from all authors. Data availability: The authors declare that the data supporting the findings of this study are available within the article and its Supplementary Information. The authors declare no competing financial interests.

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August 20, 2023
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