Published December 2001
| public
Journal Article
Modelling and Optimizing of High Sensitivity Semiconducting Thermistors at Low Temperature
Abstract
We have modelled low temperature semiconducting thermometers by using a semi-analytical approach of Anderson insulators, taking into account both the electrical field and the electron/phonon decoupling effects. We first used this simulation to fit measured V(I) curves to validate this method and to obtain physical parameters of NTD Ge and NbSi thin film samples around 100 mK. We show that considering the two effects separately leads to an overestimate of each one. Once validated, our algorithm was used to optimise the design of high sensitivity thermometers for the High Frequency Instrument (HFI) of the Planck satellite.
Additional Information
© 2001 Plenum Publishing Corporation. Received June 28, 2000; revised August 3, 2001. We thank P. Garoche at Laboratoire de Physique des Solides in Orsay for fruitful discussions and also the team of L. Dumoulin at CSNSM for providing NbSi thin film thermometers and for allowing us to use these data for the present study. The support by CNES of M. Piat is gratefully acknowledged. The Symbol experiment is funded by CNES and supported by laboratories of the authors.Additional details
- Eprint ID
- 102055
- DOI
- 10.1023/a:1012911722522
- Resolver ID
- CaltechAUTHORS:20200323-133351141
- Centre National d'Études Spatiales (CNES)
- Created
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2020-03-23Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field