Gallium Arsenide Monolithic Optoelectronic Circuits
- Other:
- Tomasetta, Lou
Abstract
The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.
Additional Information
© 1981 Society of Photo-Optical Instrumentation Engineers (SPIE).Attached Files
Published - 87.pdf
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Additional details
- Eprint ID
- 101884
- Resolver ID
- CaltechAUTHORS:20200311-161942345
- Created
-
2020-03-16Created from EPrint's datestamp field
- Updated
-
2021-11-16Created from EPrint's last_modified field
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 272