Published May 10, 1984
| Published
Book Section - Chapter
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Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater
- Creators
- Bar-Chaim, N.
- Lau, K. Y.
- Ury, I.
- Yariv, A.
- Other:
- Milano, Raymond
Chicago
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Abstract
A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate. This integrated optoelectronic circuit (IOEC) was operated as a rudimentary optical repeater. The incident optical signal is detected by the photodiode, amplified by the MESFET, and converted back to light by the laser. The gain bandwidth product of the repeater was measured to be 178 MHz.
Additional Information
© 1984) Society of Photo-Optical Instrumentation Engineers (SPIE). This work was supported by the Defense Advanced Research Project Agency and the Naval Research Laboratory.Attached Files
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Additional details
- Eprint ID
- 101881
- Resolver ID
- CaltechAUTHORS:20200311-161942053
- Defense Advanced Research Projects Agency (DARPA)
- Naval Research Laboratory
- Created
-
2020-03-16Created from EPrint's datestamp field
- Updated
-
2021-11-16Created from EPrint's last_modified field
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 466