Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures

Creators: Ting, D. Z.-Y.; Cartoixà, X.; McGill, T. C.; Smith, D. L.; Schulman, J. N.

Abstract

The Rashba effect resonant tunneling diode is a candidate for achieving spin polarizing under zero magnetic field using only conventional non-magnetic III–V semiconductor heterostructures. We point out the challenges involved based on simple arguments, and offer strategies for overcoming these difficulties. We present modeling results that demonstrate the benefits of the InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode (a-RITD) for spin filtering applications.

Additional Information

© 2002 Kluwer Academic Publishers. The authors thank D.H. Chow and T.F. Boggess for helpful discussions. This work was supported by the Defenses Advanced Research Projects Agency (DARPA) Spins in Semiconductors (SpinS) program.

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Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures

Abstract

Additional Information

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