Memory analysis for memristors and memristive recurrent neural networks
- Creators
- Bao, Gang
- Zhang, Yide
- Zeng, Zhigang
Abstract
Traditional recurrent neural networks are composed of capacitors, inductors, resistors, and operational amplifiers. Memristive neural networks are constructed by replacing resistors with memristors. This paper focuses on the memory analysis, i.e., the initial value computation, of memristors. Firstly, we present the memory analysis for a single memristor based on memristorsʼ mathematical models with linear and nonlinear drift. Secondly, we present the memory analysis for two memristors in series and parallel. Thirdly, we point out the difference between traditional neural networks and those that are memristive. Based on the current and voltage relationship of memristors, we use mathematical analysis and SPICE simulations to demonstrate the validity of our methods.
Additional Information
© 2020 IEEE. Manuscript received August 9, 2019; accepted October 24, 2019. The work was supported by the National Natural Science Foundation of China (61876097, 61673188, 61761130081), the National Key Research and Development Program of China (2016YFB0800402), the Foundation for Innovative Research Groups of Hubei Province of China (2017CFA005), and the Fundamental Research Funds for the Central Universities (2017KFXKJC002). Recommended by Associate Editor Yanjun Liu.Additional details
- Eprint ID
- 100498
- DOI
- 10.1109/JAS.2019.1911828
- Resolver ID
- CaltechAUTHORS:20200103-104814305
- 61876097
- National Natural Science Foundation of China
- 61673188
- National Natural Science Foundation of China
- 61761130081
- National Natural Science Foundation of China
- 2016YFB0800402
- National Key Research and Development Program of China
- 2017CFA005
- Foundation for Innovative Research Groups of Hubei Province of China
- 2017KFXKJC002
- Fundamental Research Funds for the Central Universities
- Created
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2020-01-05Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field