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Published January 8, 2020 | Submitted
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First-Principles Exciton Radiative Lifetimes in Wurtzite GaN

Abstract

Gallium nitride (GaN) is a key semiconductor for solid-state lighting, but its radiative processes are not fully understood. Here we show a first-principles approach to accurately compute the radiative lifetimes in bulk uniaxial crystals, focusing on wurtzite GaN. Our computed radiative lifetimes are in very good agreement with experiment up to 100 K. We show that taking into account excitons (through the Bethe-Salpeter equation) and spin-orbit coupling to include the exciton fine structure is essential for computing accurate radiative lifetimes. A model for exciton dissociation into free carriers allows us to compute the radiative lifetimes up to room temperature. Our work enables precise radiative lifetime calculations in III-nitrides and other anisotropic solid-state emitters.

Additional Information

The authors thank Davide Sangalli for fruitful discussions. V.A.J. thanks the Resnick Sustainability Institute at Caltech for fellowship support. This work was partially supported by the Department of Energy under Grant No. de-sc0019166, which provided for theory and method development, and by the National Science Foundation under Grant No. ACI-1642443, which provided for code development. This research used resources of the National Energy Research Scientific Computing Center, a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. M.P. thanks CINECA for computational resources.

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Created:
August 19, 2023
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October 18, 2023