Published May 7, 2015
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Random Surface Texturing of mc-Silicon for Solar Cells with Picosecond Lasers; a Comparison between 1064 nm, 532 nm and 355 nm Laser Emission Wavelengths
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Abstract
Multicrystalline Silicon was textured with picosecond laser. Different laser wavelengths (λ = 1064, 532, 355 nm) where compared regarding laser-induced damage. We found that λ = 355 nm picosecond radiation resulted in shallower defect-reach region.
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© 2015 Optical Society of America.Attached Files
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- CaltechAUTHORS:20191002-150220868
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2019-10-02Created from EPrint's datestamp field
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2021-11-16Created from EPrint's last_modified field