A miniaturized neuroprosthesis suitable for implantation into the brain
Abstract
This paper presents current research on a miniaturized neuroprosthesis suitable for implantation into the brain. The prosthesis is a heterogeneous integration of a 100-element microelectromechanical system (MEMS) electrode array, front-end complementary metal-oxide-semiconductor (CMOS) integrated circuit for neural signal preamplification, filtering, multiplexing and analog-to-digital conversion, and a second CMOS integrated circuit for wireless transmission of neural data and conditioning of wireless power. The prosthesis is intended for applications where neural signals are processed and decoded to permit the control of artificial or paralyzed limbs. This research, if successful, will allow implantation of the electronics into the brain, or subcutaneously on the skull, and eliminate all external signal and power wiring. The neuroprosthetic system design has strict size and power constraints with each of the front-end preamplifier channels fitting within the 400 x 400 µm pitch of the 100-element MEMS electrode array and power dissipation resulting in less than a 1° C temperature rise for the surrounding brain tissue. We describe the measured performance of initial micropower low-noise CMOS preamplifiers for the neuroprosthetic.
Additional Information
© 2003 IEEE. Manuscript received July 10, 2002; revised March 25, 2003. This work was supported under a contract with the Defense Advanced Research Projects Agency for the California Institute of Technology. The authors acknowledge the assistance of D. H. Ihme and C. E. Hopper of the University of North Carolina at Charlotte for their assistance in preamplifier measurements and preparing this paper.Attached Files
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Additional details
- Eprint ID
- 95154
- Resolver ID
- CaltechAUTHORS:20190501-154134344
- Defense Advanced Research Projects Agency (DARPA)
- Created
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2019-05-01Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field