Accelerated lifetime testing and failure analysis of quartz based GaAs planar Schottky diodes

Creators: Lin, R.; Mehdi, I.; Pease, A.; Dengler, R.; Humphrey, D.; Lee, T.; Scherer, A.; Kayali, S.

Abstract

Accelerated lifetime tests have been performed on integrated planar GaAs Schottky diodes that were bonded to quartz substrates upside-down with a heat-cured epoxy. Results at 175°C, 200°C, and 240°C were analyzed using the Arrhenius-lognormal model. These tests predict a room temperature MTTF of 3x10^8 hours, a value that is comparable to conventional high-frequency planar Schottky diodes. This result demonstrates that the use of an appropriate epoxy to obtain GaAs devices on quartz substrates does not significantly reduce the lifetime of the devices.

Additional Information

© 1997 IEEE.v The authors would like to acknowledge S. Martin for help in the device fabrication, B. Fujiwara for wire bonding, and K. Evans for the SEM images. We are also grateful to Dr. Peter Siegel and Karen Lee for technical discussion and for the support of this investigation. The research described in this paper was carried out by the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.

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