Published October 1990
| Published
Journal Article
Open
A static RAM chip with on-chip error correction
Chicago
Abstract
This paper describes a 2-kb CMOS static RAM with on-chip error-correction capability (ECCRAM chip). The chip employs the linear sum code (LSC) technique to perform error detection and correction. The ECCRAM chip has been fabricated in a double-metal scalable CMOS process with 3-µm feature size. Testing results of the actual chip shows a significant improvement in random error tolerance.
Additional Information
© 1990 IEEE. Manuscript received August 11, 1989; revised February 26, 1990. This work was supported in part by NSF Grant MIP-8711568.Attached Files
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Additional details
- Eprint ID
- 93834
- Resolver ID
- CaltechAUTHORS:20190314-142000592
- NSF
- MIP-8711568
- Created
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2019-03-14Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field