Lifetime analyses of error-control coded semiconductor RAM systems
- Creators
- Goodman, R. M. F.
- McEliece, R. J.
Abstract
The paper is concerned with developing quantitative results on the lifetime of coded random-access semiconductor memory systems. Although individual RAM chips are highly reliable, when large numbers of chips are combined to form a large memory system, the reliability may not be sufficiently high for the given application. In this case, error-correction coding is used to improve the reliability and hence the lifetime of the system. Formulas are developed which will enable the system designer to calculate the improvement in lifetime (over an uncoded system) for any particular coding scheme and size of memory. This will enable the designer to see if a particular memory system gives the required reliability, in terms of hours of lifetime, for the particular application. In addition, the designer will be able to calculate the percentage of identical systems that will, on average, last a given length of time.
Additional Information
© 1982 Institution of Electrical Engineers. Paper 1633E, first received 16th March and in final form 26th August 1981. The authors would like to acknowledge partial financial support from the UK Science and Engineering Research Council and the Joint Services Electronics Program (USA), contract N00014-78-C-0424.Attached Files
Published - 04645272.pdf
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Additional details
- Eprint ID
- 93818
- Resolver ID
- CaltechAUTHORS:20190314-130609254
- Science and Engineering Research Council (SERC)
- Joint Services Electronics Program
- N00014-78-C-0424
- Created
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2019-03-14Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field