Published April 1988
| Published
Journal Article
Open
Simulation of GaAs p-i-n diodes
- Creators
- Gopinath, A.
-
Atwater, H.
Chicago
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Abstract
GaAs p-i-n diodes have been modeled using numerical simulation, and the theoretical results have been compared to those of experiment. The simulations predict that with a lifetime of the carriers of 10^(-7)s, devices that have good i-layer modulation may be built. This is in agreement with currently available commercial devices.
Additional Information
© 1988 IEEE. Manuscript received August, 24, 1987; revised November 17, 1987. This work was sponsored by the Department of the Army.Attached Files
Published - 00002473.pdf
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00002473.pdf
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Additional details
- Eprint ID
- 93723
- Resolver ID
- CaltechAUTHORS:20190312-090512320
- U.S. Army
- Created
-
2019-03-12Created from EPrint's datestamp field
- Updated
-
2021-11-16Created from EPrint's last_modified field