Published February 2018
| public
Book Section - Chapter
Quantum Well Laser Diodes with slightly-doped tunnel junction
Abstract
We experimentally investigate the electrical and optical characteristics of conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction N++GaAs/undoped-GaAs. The results show that the slightly-doped tunnel junction give significant role on the laser diodes performances in the InGaAs/GaAs quantum well material system. The TJ LD has a internal quantum efficiency of 21% and the loss is 6.9 cm^(-1) , the current threshold is 35 mA, both the lasers are operating at 1.06 μm, but the slightly-doped tunnel junction diode show nonlinear S-shaped current-voltage and broadband lasing characteristics. The results may also lead to the realization of more applications.
Additional Information
© 2018 IEEE.Additional details
- Eprint ID
- 92563
- DOI
- 10.1109/wocn.2018.8556128
- Resolver ID
- CaltechAUTHORS:20190201-111654066
- Created
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2019-02-01Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field