Published June 2018
| public
Book Section - Chapter
Energy Band Alignment of ZnS_xSe_(1-x) Films on Si for Photovoltaic Carrier-Selective Contacts
- Creators
- Glaudell, Rebecca D.
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Atwater, Harry A.
Abstract
ZnS_xSe_(1-x) films are promising materials for front carrier-selective contacts in silicon photovoltaics given their wide bandgaps and low resistivities compared to amorphous silicon. Xray photoelectron spectra of ZnS_xSe_(1-x) (x ranging from 0 to 1) films grown on Si by molecular beam epitaxy were used to measure band offsets of ZnS_xSe_(1-x) with respect to Si for purposes of accurate optoelectronic simulations of photovoltaic devices incorporating ZnS_xSe_(1-x) carrier-selective contacts. Conduction band offsets ranged from 0.68 eV (x = 0) to 1.52 eV (x = 1) showing a significant departure from both Anderson model and density functional theory predictions.
Additional Information
© 2018 IEEE.Additional details
- Alternative title
- Energy Band Alignment of ZnSxSe1-x Films on Si for Photovoltaic Carrier-Selective Contacts
- Eprint ID
- 91651
- DOI
- 10.1109/pvsc.2018.8548022
- Resolver ID
- CaltechAUTHORS:20181210-140401481
- Created
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2018-12-10Created from EPrint's datestamp field
- Updated
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2021-11-16Created from EPrint's last_modified field