Novel InAs/GaSb/AlSb tunnel structures

Creators: Chow, D. H.; Söderström, J. R.; Collins, D. A.; Ting, D. Z.-Y.; Yu, E. T.; McGill, T. C.

Others:: Doehler, Gottfried H.; Koteles, Emil S.; Schulman, Joel N.

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Abstract

The nearly lattice-matched InAs/GaSb/A1Sb system offers tremendous flexibility in designing novel heterostructures due to its wide range of band alignments. We have recently exploited this advantage to demonstrate a new class of negative differential resistance (NDR) devices based on interband tunneling. We have also studied "traditional" double barrier (resonant) and single barrier NDR tunnel structures in the InAs/GaSb/AlSb system. Several of the interband and resonant tunneling structures display excellent peak current densities (as high as 4 x 10^5 A/cm^2 ) and/or peak-to-valley current ratios (as high as 20:1 and 88:1 at 300 K and 77 K, respectively), offering great promise for high frequency and logic applications.

Additional Information

© 1990 Society of Photo-Optical Instrumentation Engineers (SPIE). The authors gratefully acknowledge helpful discussions with Y. Rajakarunanayake, M.K. Jackson, and E.R. Brown. The support of the Office of Naval Research and the Air Force Office of Scientific Research under Grant Nos. N00014-89-J-1141 and AFOSR—86—0306, respectively, have made it possible for us to carry out this program. J.R. Söderström received financial support from the Wilhelm and Martina Lundgren Foundation. E.T. Yu was supported in part by the AT& T Foundation. D.H. Chow was supported in part by Caltech's Program in Advanced Technologies, sponsored by Aerojet Generai, General Motors, and TRW.

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