Published April 7, 1998
| Published
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Monolithic hemispherical microlenses fabricated by selective oxidation of AlGaAs
- Other:
- Schubert, E. Fred
Chicago
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Abstract
We have developed a new method for the fabrication of monolithic AlGaAs microlenses on the surface of GaAs/AlGaAs light emitting diodes by combing crystal growth, ion etching and steam oxidation with wet chemical removal of the oxide. Control over the precise processing parameters has resulted in the precise control over the shape, radius, position and smoothness of the microfabricated hemispheres. These microlenses can readily be used for the fabrication of highly efficient light-emitting diodes.
Additional Information
© 1998 Society of Photo-Optical Instrumentation Engineers (SPIE). The authors wish to thank O. Painter for helpful discussions. This research was funded by the Army Research Office, the National Science Foundation and the Office of Naval Research which are also gratefully acknowledged.Attached Files
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Additional details
- Eprint ID
- 87693
- Resolver ID
- CaltechAUTHORS:20180710-101708715
- Army Research Office (ARO)
- NSF
- Office of Naval Research (ONR)
- Created
-
2018-07-10Created from EPrint's datestamp field
- Updated
-
2021-11-15Created from EPrint's last_modified field
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 3279