Published October 1, 1990
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Microfabrication below 10 nm
Chicago
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Abstract
We describe a new electron beam lithography method for producing structures with lateral sizes smaller than the incident beam diameter. These patterns are transferred into GaAs/AlGaAs, InGaAs/GaAs and InGaAs/InP quantum well heterostructures using chemically assisted ion beam etching, thereby forming uniform arrays of pillars with lateral dimensions at or below 10 nm. To correlate the sizes of such structures with our exposure and development conditions, reflection electron microscopy observations are used.
Additional Information
© 1990 Society of Photo-Optical Instrumentation Engineers (SPIE). The authors wish to thank J.P. Harbison and R.J. Bhat for growing the GaAs/AlGaAs and InGaAs/InP structures. This work was partially supported by by the U.S. Army under contract DAAL01-89-C-0900.Attached Files
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Additional details
- Alternative title
- Microfabrication below 10 nanometers
- Eprint ID
- 87630
- Resolver ID
- CaltechAUTHORS:20180706-165009074
- Army Research Office (ARO)
- DAAL01-89-C-0900
- Created
-
2018-07-09Created from EPrint's datestamp field
- Updated
-
2021-11-15Created from EPrint's last_modified field
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 1284