Published June 20, 2006
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Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept
Chicago
Abstract
We present the results of a study of the performance of InGaAs detectors conducted for the SuperNova Acceleration Probe (SNAP) dark energy mission concept. Low temperature data from a nominal 1.7um cut-off wavelength 1kx1k InGaAs photodiode array, hybridized to a Rockwell H1RG multiplexer suggest that InGaAs detector performance is comparable to those of existing 1.7um cut-off HgCdTe arrays. Advances in 1.7um HgCdTe dark current and noise initiated by the SNAP detector research and development program makes it the baseline detector technology for SNAP. However, the results presented herein suggest that existing InGaAs technology is a suitable alternative for other future astronomy applications.
Additional Information
© 2006 Society of Photo-Optical Instrumentation Engineers (SPIE). The effort described herein was supported by funds from the JPL STI program. The detector development and procurement was sponsored by the United States Department of Energy under contract No. DE-AC02-05CH11231.Attached Files
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Additional details
- Eprint ID
- 87228
- Resolver ID
- CaltechAUTHORS:20180619-130450152
- JPL
- Department of Energy (DOE)
- DE-AC02-05CH11231
- Created
-
2018-06-19Created from EPrint's datestamp field
- Updated
-
2021-11-15Created from EPrint's last_modified field
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 6276