Published May 2, 1994
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Design of Al-free and Al-based InGaAs/GaAs strained quantum well 980-nm pump lasers including thermal behavior effects on E/O characteristics
- Other:
- Armenise, Mario Nicola
Chicago
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Abstract
A 2D thermal simulator and a model to evaluate high power lasers characteristics have been developed. With these models it was possible to optimize cavity length of InGaAs/GaAs (Multiple) Quantum Well 980 nm lasers realized both with Al-based and Al-free confining layers. A comprehensive experimental investigation of the influence of cavity length and temperature on the laser emission wavelength has been performed. This allows a fine trimming of the devices to match the Erbium doped fiber absorption bandwidth.
Additional Information
© 1994 Society of Photo-Optical Instrumentation Engineers (SPIE). The authors are indebt to Prof. I.Montrosset, Dr. M.Goano and Mr. E.Torasso from Politecnico di Torino for their valuable suggestions, and all the Alcatel-Telettra Laser Laboratory staff for their help during the work.Attached Files
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Additional details
- Eprint ID
- 87139
- Resolver ID
- CaltechAUTHORS:20180614-160352068
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2018-06-15Created from EPrint's datestamp field
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2021-11-15Created from EPrint's last_modified field
- Caltech groups
- GALCIT
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 2150