A hydro/oxo-phobic top hole-selective layer for efficient and stable colloidal quantum dot solar cells
Abstract
In this report, we explore the underlying mechanisms by which doped organic thin films as a top hole-selective layer (HSL) improve the performance and stability of colloidal quantum dot (CQD)-based solar cells. Molecular dynamics-based theoretical studies prove that the hydro/oxo-phobic properties of the HSL serve to efficiently passivate the CQD solid. Furthermore, the robust and outstanding electrical properties of the HSL, simultaneously ensure a high power conversion efficiency (PCE) and increase the stability performance of CQD-based solar cells. As a result, a best PCE of 11.7% in a lead sulfide (PbS)-based CQD solar cell is achieved and over 90% of the initial performance is retained after 1 year storage under ambient conditions.
Additional Information
© 2018 The Royal Society of Chemistry. Received 7th November 2017, Accepted 8th May 2018, First published on 10th May 2018. This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP, NRF-2015M1A2A2057509). We gratefully acknowledge support from the EEWS Research Project of the office of the KAIST EEWS Initiative (EEWS-2016-N11160015) and the Korea Institute of Energy Technology Evaluation and Planning (KETEP), a financial grant from the Ministry of Trade, Industry & Energy (No. 20163030013620 and 20173010013200). This work was also supported by the Global R&D program (1415134409) funded by KIAT. There are no conflicts to declare.Attached Files
Supplemental Material - c7ee03184j1_si.pdf
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Additional details
- Eprint ID
- 86652
- Resolver ID
- CaltechAUTHORS:20180529-092753800
- National Research Foundation of Korea
- NRF-2015M1A2A2057509
- Korea Advanced Institute of Science and Technology (KAIST)
- EEWS-2016-N11160015
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry & Energy (Korea)
- 20163030013620
- Ministry of Trade, Industry & Energy (Korea)
- 20173010013200
- Korea Institute for Advancement of Technology
- 1415134409
- Created
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2018-05-29Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field