A 75–116-GHz LNA with 23-K noise temperature at 108 GHz
Abstract
In this paper we present the design and measurement results, both on-wafer and in package, of an ultra-low-noise and wideband monolithic microwave integrated circuit (MMIC) amplifier in the frequency range of 75 to 116 GHz. The three-stage amplifier packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology achieves a record noise temperature of 23 K at 108 GHz when cryogenically cooled to 27 K. The measured gain is 22 to 27 dB for frequency range of 75 to 116 GHz. Furthermore, the amplifier utilizes four-finger devices with a total gate width of 60 μm resulting in higher output power. Therefore, we consider that this amplifier achieves state-of-the-art performance in terms of bandwidth, noise temperature, gain, and linearity so far reported for cryogenically cooled amplifiers around W-band.
Additional Information
© 2013 IEEE. This work was performed in part at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration. The work of M. Varonen was supported by Oak Ridge Associated Universities through the NASA Postdoctoral Program (NPP) and by Alfred Kordel Foundation. We would like to thank Ms. Mary Soria and Ms. Heather Owen of JPL for assembly expertise.Additional details
- Eprint ID
- 86613
- DOI
- 10.1109/MWSYM.2013.6697595
- Resolver ID
- CaltechAUTHORS:20180525-073555253
- NASA/JPL/Caltech
- NASA Postdoctoral Program
- Alfred Kordel Foundation
- Created
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2018-05-25Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field