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Published December 1993 | public
Journal Article

Metalorganic chemical vapor deposition of copper from copper(II) dimethylaminoethoxide

Abstract

Copper metal films were grown on single-crystal strontium titanate (100) by the thermal decomposition of copper dimethylamino ethoxide in inert atmosphere at temperatures between 150 and 270 °C. Films grown at 200 °C are copper metal, free from contaminants, while higher temperatures result in significant carbon and oxygen incorporation. Deposition products were identified by Fourier transform infrared spectroscopic analysis of the reactor gas phase in situ and by mass spectroscopic analysis of the reactor exit gas during deposition. At 200 °C, deposition occurs by interdependent β-hydride elimination and reductive elimination reactions which produce (dimethylamino)ethanal, (dimethylamino)ethanol, and copper metal. β-Hydride and reductive elimination reactions are also dominant at 250 "C; however, the competition of ligand fragmentation reactions with the whole-ligand eliminating reactions leads to carbon and oxygen contamination of the copper metal film.

Additional Information

© 1993 American Chemical Society. Received March 9, 1993. Revised Manuscript Received October 7, 1993. The authors acknowledge Dr. Kirk H. Schulz, currently at the University of North Dakota, for collection of LEED data; Dr. S. B. Desu at Virginia Polytechnic Institute and State University for use of his four-point probe apparatus; Tina A. Handlos and Brian Risch at Virginia Polytechnic Institute and State University for assistance in obtaining SEM photographs; and Kelly E. Matthews and Christopher P. Roy at Virginia Polytechnic Institute and State University for collection of NMR spectra.

Additional details

Created:
August 20, 2023
Modified:
October 18, 2023