Published December 19, 2001
| Published + Supplemental Material
Journal Article
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Molecular-Based Electronically Switchable Tunnel Junction Devices
Chicago
Abstract
Solid-state tunnel junction devices were fabricated from Langmuir Blodgett molecular monolayers of a bistable [2]catenane, a bistable [2]pseudorotaxane, and a single-station [2]rotaxane. All devices exhibited a (noncapacitive) hysteretic current−voltage response that switched the device between high- and low-conductivity states, although control devices exhibited no such response. Correlations between the structure and solution-phase dynamics of the molecular and supramolecular systems, the crystallographic domain structure of the monolayer film, and the room-temperature device performance characteristics are reported.
Additional Information
© 2001 American Chemical Society. ACS Editors' Choice - Sponsored Access by American Chemical Society. Received 12 June 2001. Published online 22 November 2001. Published in print 19 December 2001. This work was funded by the Defense Advanced Research Projects Agency, the Semiconductor Research Corporation, and the Office of Naval Research. C.P.C. is an employee of the Hewlett-Packard Corporation, and the NMR spectrometer used in this work was supported by the National Science Foundation. We thank the University of Odense for a Ph.D. Scholarship to J.O.J.Attached Files
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Additional details
- Eprint ID
- 85057
- Resolver ID
- CaltechAUTHORS:20180302-082756149
- Defense Advanced Research Projects Agency (DARPA)
- Semiconductor Research Corporation
- Office of Naval Research (ONR)
- Hewlett-Packard Corporation
- NSF
- Created
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2018-03-02Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field