Direct Bonding SOI Wafer Based Cantilever Resonator for Trace Gas Sensor Application
- Creators
- Ying, Dong
- Wei, Gao
- Zheng, You
Abstract
A thermal driving and piezoresistive sensing MEMS cantilever resonator has been proposed and developed to construct trace gas detection sensors. The problem of integrating vibration structure, transducers and electric elements is the main concern in the design and fabrication of the resonator. In this paper, the parameters and the configuration of the resonator are discussed, the fabrication process and the test results are presented. Finite Element Analysis (FEA) has been carried out to optimize the configuration of the resonator to obtain high sensitivity and efficiency with a uniform temperature distribution that is propitious to the function of the gas sensing material. The fabrication process is based on direct bonding silicon-on-insulator (SOI) wafer and inductive coupled plasma (ICP) etching technology, which conciliate the semiconductor processes and the micromaching processes, and provide precise control of the resonator parameters. The experimental test results of the fabricated resonator agreed well with the calculation and simulation results and demonstrated that the proposed resonator was qualified to construct trace gas detection sensors.
Additional Information
© 2009 IEEE. This project is supported by the National Nature Science Foundation of China (NSFC, No.50405060). The fabrication of the resonator was accomplished by the Institute of Semiconductors, Chinese Science Academy (CSA). We are grateful to Professor Ji An and Dr. Ning Jin for their advices and contributions.Attached Files
Published - 05068543.pdf
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Additional details
- Eprint ID
- 84546
- Resolver ID
- CaltechAUTHORS:20180126-135106198
- 50405060
- National Natural Science Foundation of China
- Chinese Science Academy
- Created
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2018-01-31Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field