Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III–V Semiconductor Lasers
Abstract
We demonstrate a narrow-linewidth heterogeneously integrated Si/III-V laser, where the current confinement in the III-V structure is obtained by oxide isolation rather than by the prevailing ion-implantation technique. This method provides effective electrical isolation as well as III-V surface passivation, and a pathway for high-efficiency diode injection laser performance. This method also offers increased compatibility with potentially high-temperature annealing processes. The lasers shown here possess a threshold current of as low as 60 mA and a single-facet output power of more than 3 mW at 20 °C. A linewidth of 28 kHz at 1574.8 nm is obtained at a current of 200 mA (I = 3.3 × I_(th)). Single-mode operation is achieved with a side-mode suppression ratio larger than 55 dB.
Additional Information
© 2017 IEEE. Manuscript received August 23, 2017; revised October 31, 2017; accepted November 3, 2017. Date of publication November 8, 2017; date of current version November 17, 2017. This work was supported in part by DARPA MTO under Grant N66001-14-1-4062, and in part by the U.S. Army Research Office under Grant W911NF-16-C-0026 and Grant W911NF-14-P-0020. The authors would like to acknowledge technical and fabrication infrastructure support from the Kavli Nanoscience Institute at the California Institute of Technology.Additional details
- Eprint ID
- 84426
- Resolver ID
- CaltechAUTHORS:20180119-130456430
- N66001-14-1-4062
- Defense Advanced Research Projects Agency (DARPA)
- W911NF-16-C-0026
- Army Research Office (ARO)
- W911NF-14-P-0020
- Army Research Office (ARO)
- Created
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2018-01-19Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute