Fermi level alignment by copper doping for efficient ITO/perovskite junction solar cells

Abstract

Different from band edge alignment, the Fermi level mismatch induced by band bending can manipulate charge collection at the ITO/(CH_3NH_3)_(1−x)Cu_xPbI_3 heterojunctions. In this work, we employed a feasible spin-coating process to prepare copper defect compensation in CH_3NH_3PbI_3. The related work function was shown to shift with the copper doping density by Kelvin probe force microscopy (KPFM). Next, we applied transient surface photovoltage (TSPV) spectroscopy and first-order series reactions simulations to confirm that interface charge recombination at the ITO/perovskite junction can be eliminated through Cu+ doping. Nanoelectric photoconductive AFM analysis showed enhanced charge transfer and a higher photovoltage at the ITO/Cu-perovskite junction. Owing to efficient Fermi level alignment, the ITO/(CH_3NH_3)_(1−x)Cu_xPbI_3/PCBM/Ag devices displayed high power conversion efficiencies of 15.14 ± 0.67% at ambient conditions for inverted perovskite solar cells without any hole transport layer.

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