Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal)

Abstract

After a brief historical introduction, the two main techniques used so far to synthesize TM–Si–N films are mentioned. Although principally developed and investigated for application to semiconductor devices, unanticipated alternative uses of TM–Si–N films have arisen. The most fully investigated alloy of the group is Ti–Si–N. Its known properties are reviewed. General trends are outlined that apply generally to all TM–Si–N alloys, with variations peculiar to each transition metal case. Other reactively sputtered ternary nitrogen compounds with related characteristics are also mentioned briefly, as well as the possibility to envisage analogous ternary alloys based on combinations of different elements.

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