Germanium α-particle detectors with aluminum regrowth p+ contacts

Abstract

Solid-phase epitaxial regrowth techniques have been used to form thin p+ contacts on n-type germanium. Aluminum layers 400 to 1000 Å thick were evaporated on germanium, heated to 300 to 350 °C and slow-cooled to form p+ layers. Resolutions of 14 keV for 6.05 MeV α-particles were obtained consistently on 25 mm^2 detectors cooled to liquid-nitrogen temperatures.

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