Published December 1974
| Published
Journal Article
Open
Generation-recombination noise of junction-gate field-effect transistors
- Creators
- Boctor, Waguih J.
- Prasad, Sheila
Abstract
The generation-recombination noise of junction-gate field-effect transistors is calculated taking into account the variable mobility. The field dependence of mobility suggested by Trofimenkoff is used, and the resultant spectral intensity of the drain-noise fluctuations shows no signs of a logarithmic singularity at saturation. The need for any cutoff procedure to remove the logarithmic singularity at saturation is therefore removed, and it is thus an improvement over earlier methods.
Additional Information
© 1974 The Institution of Electrical Engineers. Paper 7303 E, first received 25th March and in revised form 28th, August 1974.Attached Files
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Additional details
- Eprint ID
- 80031
- Resolver ID
- CaltechAUTHORS:20170809-144231919
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2017-08-09Created from EPrint's datestamp field
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2022-10-05Created from EPrint's last_modified field