Very High Frequency Silicon Nanowire Electromechanical Resonators
- Creators
- Feng, X. L.
- He, Rongrui
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Yang, Peidong
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Roukes, M. L.
Abstract
We demonstrate very high frequency (VHF) nanomechanical resonators based upon single-crystal silicon nanowires (SiNWs), which are prepared by the bottom-up chemical synthesis. Metallized SiNW resonators operating near 200 MHz are realized with quality factor Q ≈ 2000−2500. Pristine SiNWs, with fundamental resonances as high as 215 MHz, are measured using a VHF readout technique that is optimized for these high resistance devices. The pristine resonators provide the highest Q's, as high as Q ≈ 13 100 for an 80 MHz device. SiNWs excel at mass sensing; characterization of their mass responsivity and frequency stability demonstrates sensitivities approaching 10 zeptograms. These SiNW resonators offer significant potential for applications in resonant sensing, quantum electromechanical systems, and high frequency signal processing.
Additional Information
© 2007 American Chemical Society. Received 22 March 2007. Published online 22 June 2007. Published in print 1 July 2007. We gratefully acknowledge support from the NSF under grant EECS 0425914 (NSF-NSEC), MARCO, and from DARPA/SPAWAR under grant N66001-02-1-8914. X.L. Feng thanks S. Stryker for help in engineering and fabrication of experimental apparatus, and B. Gudlewski for helpful discussions.Additional details
- Eprint ID
- 79836
- Resolver ID
- CaltechAUTHORS:20170807-082813235
- NSF
- EECS-0425914
- Defense Advanced Research Projects Agency (DARPA)
- Microelectronics Advanced Research Corporation (MARCO)
- Office of Naval Research (ONR)
- N66001-02-1-8914
- Created
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2017-08-07Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field