Published November 2006
| public
Journal Article
Polarization-Selective Plasmon-Enhanced Silicon Quantum-Dot Luminescence
Chicago
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Abstract
The photoluminescence intensity of silicon quantum dots is enhanced in a polarization-selective way by coupling to elongated Ag nanoparticles. The observed polarization dependence provides direct proof that the PL enhancement is due to electromagnetic coupling of the silicon quantum-dot emission dipoles with dipolar plasmon modes of the Ag nanoparticles. The polarization selectivity demonstrates the potential of engineered plasmonic nanostructures to optimize and tune the performance of light sources in a way that goes beyond solely enhancing the emission and absorption rates.
Additional Information
© 2006 American Chemical Society. Received 28 June 2006. Published online 24 October 2006. Published in print 1 November 2006. We thank Kobus Kuipers for fruitful discussions. This work is part of the research program of the "Stichting voor Fundamenteel Onderzoek der Materie (FOM)", which is financially supported by the "Nederlandse organisatie voor Wetenschappelijk Onderzoek (NWO)". This work was also partially supported by NANONED, a nanotechnology program of the Dutch Ministry of Economic Affairs, by NSF Grant No. CHE-0213589, and by AFOSR MURI Award Nos. FA9550-05-1-0450 and FA9550-04-1-0434.Additional details
- Eprint ID
- 79816
- Resolver ID
- CaltechAUTHORS:20170803-093629087
- Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO)
- Ministry of Economic Affairs (Netherlands)
- NSF
- CHE-0213589
- Air Force Office of Scientific Research (AFOSR)
- FA9550-05-1-0450
- Air Force Office of Scientific Research (AFOSR)
- FA9550-04-1-0434
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2017-08-05Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field