Published April 1980
| Published
Journal Article
Open
Investigation of titanium-nitride layers for solar-cell contacts
Chicago
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Abstract
Reactively sputtered titanium-nitride layers have been incorporated as diffusion barriers in a titanium-silver metallization scheme on silicon, Backscattering analysis (2-MeV He+, RBS) indicates that the integrity of the system is basically preserved during annealing at 600° for 10 min. Electrical properties were determined for titanium-nitride layers prepared under different deposition conditions. Resistivity and Hall mobility appear to depend on the oxygen contamination of the deposited material. For the lowest oxygen concentration (<5 at %) a resistivity of 170 µΩ . cm has been found.
Additional Information
© 1980 IEEE. Manuscript received August 16, 1979; revised December 11, 1979. This research was supported initially by the Jet Propulsion Laboratory (R. Lutwack) and subsequently by the Department of Energy, monitored by Sandia Laboratories, Albuquerque, NM.Attached Files
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Additional details
- Eprint ID
- 79790
- Resolver ID
- CaltechAUTHORS:20170802-155903092
- JPL
- Department of Energy (DOE)
- Sandia Laboratories
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2017-08-02Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field