Published February 5, 1981
| Published
Journal Article
Open
Buried heterostructure AlGaAs lasers on semi-insulating substrates
- Creators
- Bar-Chaim, N.
- Katz, J.
- Ury, I.
- Yariv, A.
Chicago
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Abstract
Buried heterostructure (BH) AlGaAs lasers were fabricated on Cr-doped semi-insulating substrates. Low threshold current (8 mA/μm stripe width for cavity length of 300 μm), a high differential quantum efficiency (55%), and stable transverse mode operation were realised.
Additional Information
© 1981 The Institution of Electrical Engineers. 2nd January 1981.Attached Files
Published - 04245539.pdf
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- Eprint ID
- 79777
- Resolver ID
- CaltechAUTHORS:20170802-142752203
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2017-08-02Created from EPrint's datestamp field
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2022-10-04Created from EPrint's last_modified field