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Published February 5, 1981 | Published
Journal Article Open

Buried heterostructure AlGaAs lasers on semi-insulating substrates

Abstract

Buried heterostructure (BH) AlGaAs lasers were fabricated on Cr-doped semi-insulating substrates. Low threshold current (8 mA/μm stripe width for cavity length of 300 μm), a high differential quantum efficiency (55%), and stable transverse mode operation were realised.

Additional Information

© 1981 The Institution of Electrical Engineers. 2nd January 1981.

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