Published October 15, 1981
| Published
Journal Article
Open
Groove GaInAsP laser on semi-insulating InP
- Creators
- Yu, K. L.
- Koren, U.
- Chen, T. R.
- Chen, P. C.
- Yariv, A.
Chicago
An error occurred while generating the citation.
Abstract
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilises a single LPE growth process on a grooved substrate to form an index guided device. Current confinement was obtained by the semi-insulating InP surrounding the GaInAsP active layer. Threshold current as low as 28 mA with 250 μm cavity length was obtained. The light/current characteristic was linear up to five times I_(th). A single longitudinal mode at 1.20 μm up to 1.3 I_(th) was observed.
Additional Information
© 1981 The Institution of Electrical Engineers. 17th August 1981. The authors wish to thank Dr. N. Bar-Chaim of California Institute of Technology for helpful discussions and P. Koen of California Institute of Technology for taking the scanning electron microscope (SEM) pictures. This work is supported by the US Office of Naval Research and by the National Science Foundation.Attached Files
Published - 04246033.pdf
Files
04246033.pdf
Files
(421.4 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:92fd268448174018ecd20537975f0a8f
|
421.4 kB | Preview Download |
Additional details
- Eprint ID
- 79733
- Resolver ID
- CaltechAUTHORS:20170801-175034699
- Office of Naval Research (ONR)
- NSF
- Created
-
2017-08-02Created from EPrint's datestamp field
- Updated
-
2022-10-04Created from EPrint's last_modified field