Published June 1982
| Published
Journal Article
Open
Electrical properties of multi p-n junction devices
- Creators
- Katz, Joseph
- Margalit, Shlomo
- Yariv, Amnon
Abstract
The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.
Additional Information
© 1982 IEEE. Manuscript received November 16, 1981; revised February 3, 1982. This work was supported in part by the Jet Propulsion Laboratory, California Institute of Technology, under NASA Contract NAS7-100, the Office of Naval Research and the National Science FoundationAttached Files
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Additional details
- Eprint ID
- 79628
- Resolver ID
- CaltechAUTHORS:20170731-152344583
- NAS7-100
- NASA/JPL/Caltech
- Office of Naval Research (ONR)
- NSF
- Created
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2017-08-01Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field