Published September 15, 1983
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Journal Article
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High-speed Schottky photodiode on semi-insulating GaAs
Abstract
A high-speed GaAs photodiode has been fabricated on a GaAs semi-insulating substrate. The photodiode has an active area of 8 μm × 15 μm and a bandwidth in excess of 9 GHz. This Schottky photodiodes is suitable for monolithic integration with other optoelectronic components.
Additional Information
© 1983 The Institution of Electrical Engineers. 19th July 1983.Attached Files
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