Published July 1984
| Published
Journal Article
Open
Vertical FET's in GaAs
Chicago
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Abstract
Vertical FET's in GaAlAs material systems have been fabricated. The present structure makes possible extremely short (less than 1000-Å) channel devices which are beyond the reach of optical lithographic processes. Devices with transconductance g_m high as 280 mS/mm have been obtained.
Additional Information
© 1984 IEEE. Manuscript received January 17, 1984; revised March 8, 1984. This work was supported by the office of Naval Research and the NSF (Optical Communication Project).Attached Files
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Additional details
- Eprint ID
- 79513
- Resolver ID
- CaltechAUTHORS:20170727-162918107
- Office of Naval Research (ONR)
- NSF
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2017-07-28Created from EPrint's datestamp field
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2021-11-15Created from EPrint's last_modified field