An improved forward I-V method for nonideal Schottky diodes with high series resistance
- Creators
- Lien, C.-D.
- So, F. C. T.
- Nicolet, M.-A.
Abstract
Two methods are described to obtain the value of the series resistance(R)of a Schottky diode from its forward I-V characteristic. The value of R is then used to plot the curve ln(I) versus V_D (= V - IR)which becomes a straight line even if ln(I) versus V does not. The ideality factor n and the Schottky-barrier height Φ_(B0) of the diode then follow from the standard procedure. The main advantages of the methods are: 1) a linear regression can be used to calculate the value of R, 2) many data points are used over the whole data range which raises the accuracy of the results, and 3) the validity of constant R assumption can be checked by the linearity of the ln(I) versus V_D curve. The methods are illustrated on the experimental data of a real diode.
Additional Information
© 1984 IEEE. Manuscript received April 20, 1984. This work was sponsored in part by the Jet Propulsion Laboratory, California Institute of Technology, Director's Discretionary Fund, through an agreement with the National Aeronautics and Space Administration (A. Morrison).Attached Files
Published - 01484024.pdf
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Additional details
- Eprint ID
- 79439
- Resolver ID
- CaltechAUTHORS:20170726-143803541
- NASA/JPL/Caltech
- Created
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2017-07-26Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field