Hall Mobility Measurements and Chemical Stability of Ultrathin, Methylated Si(111)-on-Insulator Films
Abstract
The chemical and electronic properties of 10−20 nm thick, methylated Si(111)-on-insulator (CH_3/Si(111)_(SOI)) thin films, prepared using a wet chemical chlorination/methylation procedure, are investigated. X-ray photoelectron spectroscopy reveals that CH_3/Si(111)_(SOI) is resistant to oxidation upon exposure to air and to various device fabrication schemes and associated chemicals. Temperature-dependent Hall mobility measurements yield results that are dependent upon the duration of the chlorination step. For short-time chlorination steps, bulklike mobilities are observed, and the dominant scattering mechanism arises from ionized impurities. For longer time chlorination steps, surface roughness or neutral impurity scattering limit the carrier mobilities.
Additional Information
© 2008 American Chemical Society. Received 30 October 2007. Published online 11 March 2008. Published in print 1 April 2008. We acknowledge assistance from the Molecular Materials Research Center of the Beckman Institute at Caltech. We thank Ke Xu, Dr. Ezekiel Johnston-Halperin, Dr. Lauren Webb, and Prof. Nate Lewis for helpful discussions. This research was supported by the NSF (NMF-CCF-05204490) and by the MARCO Center for Advanced Materials and Devices.Attached Files
Supplemental Material - jp710482t-file001.pdf
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Additional details
- Eprint ID
- 79184
- DOI
- 10.1021/jp710482t
- Resolver ID
- CaltechAUTHORS:20170719-065012335
- Caltech
- NSF
- CCF-05204490
- Microelectronics Advanced Research Corporation (MARCO)
- Created
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2017-07-19Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field