Published May 1987
| Published
Journal Article
Open
A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration
Chicago
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Abstract
A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time. High current gain (β > 500) and high collector current (I_c> 200 mA) were obtained in devices with an emitter-down configuration. The HBT was successfully integrated with a double-heterostructure (DH) laser, resulting in the first realization of laser operation in a vertical integration.
Additional Information
© 1987 IEEE. Manuscript received January 20, 1987. This work was supported by the Office of Naval Research, the National Science Foundation, and the Army Research Office.Attached Files
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Additional details
- Eprint ID
- 79170
- Resolver ID
- CaltechAUTHORS:20170718-165038642
- Office of Naval Research (ONR)
- NSF
- Army Research Office (ARO)
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2017-07-19Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field