Published August 1987
| Published
Journal Article
Open
GaInAsP/InP unstable resonator lasers
Abstract
Double-heterostructure GaInAsP/InP unstable resonator lasers have been fabricated for the first time. Both facets are made by a simple two-step chemical etching process. The required nearly vertical lateral curved cavity mirrors are achieved. The unstable resonator lasers exhibit an output power of 105 mW.
Additional Information
© 1987 The Institution of Electrical Engineers. The support of the Office of Naval Research and of the Army Research Office is gratefully acknowledged.Attached Files
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Additional details
- Eprint ID
- 79165
- Resolver ID
- CaltechAUTHORS:20170718-152546928
- Office of Naval Research (ONR)
- Army Research Office (ARO)
- Created
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2017-07-18Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field