Published May 2017
| public
Book Section - Chapter
Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Laser
Chicago
An error occurred while generating the citation.
Abstract
We demonstrate a narrow-linewidth heterogeneously integrated silicon/III-V laser based on the oxide-confinement method. The laser achieves an output power of 4 mW and a linewidth of 28 kHz with a threshold current of 60 mA and a side mode suppression ratio of 50 dB at 1574 nm.
Additional Information
© 2017 OSA.Additional details
- Eprint ID
- 78570
- Resolver ID
- CaltechAUTHORS:20170626-081437206
- Created
-
2017-06-26Created from EPrint's datestamp field
- Updated
-
2021-11-15Created from EPrint's last_modified field