Published March 1998
| Published
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Reaction sequence of thin Ni films with (001) 3C-SiC
- Creators
- Gasser, S. M.
- Bachli, A.
- Kolawa, E.
- Nicolet, M. A.
Abstract
Nickel is frequently used as a contact to SiC. We investigate the reaction sequence between Ni and cubic SiC at annealing temperatures between 400°C and 700°C in vacuum.
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