Near-Ideal Photodiodes from Sintered Gold Nanoparticle Films on Methyl-Terminated Si(111) Surfaces
Abstract
We report photocurrent-voltage data for improved n-Si/metal devices using CH_3-terminated n-Si(111) and Au nanoparticles (NPs). CH_3-terminated Si(111) surfaces maintain good electronic properties throughout device assembly, while the use of Au NPs as precursors to metal films circumvents the standard issues associated with interfacial reactivity of metals in Schottky barrier formation. Such devices demonstrate excellent photovoltaic properties, with photovoltages that approach the maximum values predicted for photodiodes that are limited by Si bulk diffusion/recombination processes rather than interfacial processes. These devices are compared to standard n-Si/Au devices made via thermally evaporated Au films which are well-known to be limited by junction-based recombination.
Additional Information
© 2008 American Chemical Society. Received January 24, 2008. Publication Date (Web): February 27, 2008. We gratefully acknowledge the National Science Foundation, grant No. CHE-0604894, for support of this work. S.M. also acknowledges financial support from the Ford Foundation, through the National Academies of Sciences.Attached Files
Supplemental Material - ja800603v-file001.pdf
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Additional details
- Eprint ID
- 77498
- Resolver ID
- CaltechAUTHORS:20170516-110757358
- CHE-0604894
- NSF
- Ford Foundation
- National Academies of Sciences
- Created
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2017-05-16Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field