Phonon scattering by dislocations at grain boundaries in polycrystalline Bi_(0.5)Sb_(1.5)Te_3
Abstract
Reducing lattice thermal conductivity (κ_l) of a thermoelectric material is one of the most popular strategies to improve its thermoelectric performance. Particularly, many efforts have been focused on decreasing grain size to effectively scatter low-frequency phonons by boundary scattering. In addition to the boundary scattering, we have recently demonstrated that dense arrays of dislocations formed in grain boundaries can further reduce the κ_l by dislocation scattering at room temperature and above. In order to closely examine the effect of the dislocation scattering, the κ_l of polycrystalline Bi_(0.5)Sb_(1.5)Te_3 samples with and without dislocations were measured at low temperature (T < 200 K). Because other phonon scattering mechanisms like Umklapp and point-defect scatterings are not dominant at low temperature, we clearly show the presence of the dislocation scattering in the sample with the dislocations by successfully describing its low temperature experimental κ_l with a theoretical model.
Additional Information
© 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Issue online: 11 May 2017; Version of record online: 15 November 2016; Manuscript Revised: 18 October 2016; Manuscript Accepted: 18 October 2016; Manuscript Received: 24 February 2016. Funded by: Solid-State Solar-Thermal Energy Conversion Center. Grant Number: S3TEC; U.S. Department of Energy, Office of Science. Grant Number: DE-SC0001299; Samsung Advanced Institute of Technology.Additional details
- Alternative title
- Phonon scattering by dislocations at grain boundaries in polycrystalline Bi0.5Sb1.5Te3
- Eprint ID
- 77490
- Resolver ID
- CaltechAUTHORS:20170516-100439508
- Solid-State Solar-Thermal Energy Conversion Center
- S3TEC
- Department of Energy (DOE)
- DE-SC0001299
- Samsung Advanced Institute of Technology
- Created
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2017-05-16Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field