Published July 19, 2006
| Supplemental Material
Journal Article
Open
Electrical Characteristics and Chemical Stability of Non-Oxidized, Methyl-Terminated Silicon Nanowires
Chicago
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Abstract
Silicon nanowires (Si NWs) modified by covalent Si−CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on−off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).
Additional Information
© 2006 American Chemical Society. Received 4 October 2005. Published online 27 June 2006. Published in print 1 July 2006. We acknowledge the NSF, Grant CHE-0213589, for support of this work (N.S.L.), and DARPA-MARCO (P.Y.). H.H. thanks the Fulbright foundation for his postdoctoral fellowship, and A.H. thanks NSF for an IGERT fellowship.Attached Files
Supplemental Material - ja056785w_s.pdf
Supplemental Material - ja056785wsi20060623_125407.pdf
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Additional details
- Eprint ID
- 77429
- DOI
- 10.1021/ja056785w
- Resolver ID
- CaltechAUTHORS:20170512-144735960
- NSF
- CHE-0213589
- Defense Advanced Research Projects Agency (DARPA)
- Fulbright Foundation
- NSF Graduate Research Fellowship
- Microelectronics Advanced Research Corporation (MARCO)
- Created
-
2017-05-12Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field